| 1. | Q. |
What kinds of ion implants are most likely to cause wafer charging problems? |
| A. |
High-current implants used to fabricate source/drain junctions as well as some medium-current implants.
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| 2. | Q. |
Do flood guns or E-showers eliminate wafer charging during ion implantation? |
| A. |
They can significantly reduce wafer charging, but it can still be a problem, depending on equipment set-up.
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| 3. | Q. |
What is a "safe" beam current for a source/drain ion implant? |
| A. |
Contemporary ion implanters, when properly optimized, can be operated at the rated output of the implanter.
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| 4. | Q. |
Can I operate a high-current ion implanter at its rated output to maximize through-put and not cause charging damage to product wafers? |
| A. |
Yes. But it may require optimization of the implant parameters and charge control system settings.
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| 5. | Q. |
Can I use CHARM®-2 wafers to optimize the implant and charge control system settings to maximize through-put? |
| A. |
Yes, this is a straightforward application. Please contact WCM for more information.
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| 6. | Q. |
Does the polarity of the resist mask have an influence on wafer charging during ion implantation? |
| A. |
Yes, and the difference is significant -- as discussed in the following paper:
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Wafer Charging Monitors, Inc.